 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| (R) ISO 9001 Registered Process C3015 CMOS 3m Digital Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.6 42 2.85 12 12 Typical 0.8 0.6 47 3.2 0.7 Maximum 1.0 52 3.55 Unit V V1/2 A/V2 m m V V Comments 100x3m 100x3m 100x100m 100x3m Per side P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP P P LeffP WP BVDSSP VTFP(P) Minimum -0.6 13 2.85 -12 -12 Typical -0.8 0.55 15 3.2 0.9 Maximum -1.0 19 3.55 Unit V V1/2 A/V2 m m V V Comments 100x3m 100x3m 100x100m 100x3m Per side Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Gate Poly Sheet Resistance Metal-1 Sheet Resistance Passivation Thickness Symbol P-well(f) N+ xjN+ P+ xjP+ TGOX POLY1 M1 TPASS Minimum 3.2 16 50 37.5 15 Typical 4.8 21 0.8 80 0.7 40.0 22 30 200+900 Maximum 6.5 27 100 42.5 30 60 Unit K/ / m / m nm / m/ nm Comments P-well oxide+nit. Capacitance Gate Oxide Metal-1 to Poly-1 Metal-1 to Silicon Symbol COX CM1P CM1S Minimum 0.66 0.026 Typical 0.72 0.0523 0.030 Maximum 0.78 0.034 Unit fF/m2 fF/m2 fF/m2 Comments (c) IMP, Inc. 89 Process C3015 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Metal-1 Width/Space Gate Poly Width/Space N <100> 15 - 25 -cm 5V P-well 1 1 2.0x2.0m 3.5 / 2.5m 3.0 / 2.5m N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Diffusion Contact Overlap Of Poly Metal-1 Overlap Of Contact Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch 3.0 / 3.0m 12m 2.5m 1.5m 1.0m 1.0 m 100x100m 5.0m 80.0m Special Feature of C3015 Process: 3 m P-well digital process. Second metal Poly gate A1 SIO2 LTO p+ p-well contact n+ Drain n+ source SIO2 p p+ Drain p+ Source n+ N- substrate contact Field Oxide Sidewall spacer Bottom poly Poly gate Contact p p p-well n-epi N+ substrate Cross-sectional view of the C3015 process ID vs VD, W/L = 20/4.0 5 VGS = 10V 4 VGS = 9.0V VGS = 8.0V 3 VGS = 7.0V VGS = 6.0V VGS = 5.0V 1 VGS = 4.0V VGS = 3.0V VGS = 2.0V 56 78 9 10 34 Drain Voltage (v), VDS n-ch Transistor IV Characteristics of a 20/4.0 device 1 2 0 0 0 0 1 Drain Current (mA) IDS -2.5 -3 ID vs VD, W/L = 20/4.0 Drain Current (mA) IDS -2 VGS = -10V VGS = -9.0V VGS = -8.0V VGS = -7.0V VGS = -6.0V VGS = -5.0V VGS = -4.0V VGS = -3.0V VGS = -2.0V 10 -1.5 -1 2 -.5 2 78 56 34 Drain Voltage (v) VDS 9 p-ch Transistor Characteristics of a 20/4.0 device 90 C3015-4-98 |
Price & Availability of C3015
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |